2SK2315TYTR-E
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- Mfr.Part #
- 2SK2315TYTR-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 2A UPAK
- Stock
- 2,050
- In Stock ：
- 2,050
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 2A
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 1W Ta
- Package / Case :
- TO-243AA
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 2A
- Current Rating :
- 2A
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Rds On (Max) @ Id, Vgs :
- 450m Ω @ 1A, 4V
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.45Ohm
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Published :
- 2005
- Pulsed Drain Current-Max (IDM) :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 173pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 3V 4V
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Voltage - Rated DC :
- 60V
- Terminal Form :
- Flat
- Pin Count :
- 4
- Factory Lead Time :
- 16 Weeks
- JESD-30 Code :
- R-PSSO-F3
- Datasheets
- 2SK2315TYTR-E
N-Channel Tape & Reel (TR) 450m Ω @ 1A, 4V ±20V 173pF @ 10V TO-243AA
2SK2315TYTR-E Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 173pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 2A.There is a peak drain current of 4A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (3V 4V).
2SK2315TYTR-E Features
a continuous drain current (ID) of 2A
based on its rated peak drain current 4A.
2SK2315TYTR-E Applications
There are a lot of Renesas Electronics America
2SK2315TYTR-E applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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