2SK2225-E
- Mfr.Part #
- 2SK2225-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-3PFM, SC-93-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 2A TO3PFM
- Stock
- 916
- In Stock :
- 916
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 150°C TJ
- Power Dissipation-Max :
- 50W Tc
- Case Connection :
- Isolated
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 16 Weeks
- Surface Mount :
- No
- Drain to Source Breakdown Voltage :
- 1.5kV
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e2
- Number of Elements :
- 1
- Package / Case :
- TO-3PFM, SC-93-3
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation :
- 50W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2005
- Input Capacitance (Ciss) (Max) @ Vds :
- 984.7pF @ 30V
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 2A
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 150 ns
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 12 Ω @ 1A, 15V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Height :
- 25.5mm
- Pulsed Drain Current-Max (IDM) :
- 7A
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Turn On Delay Time :
- 17 ns
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 1500V
- Drain Current-Max (Abs) (ID) :
- 2A
- Drive Voltage (Max Rds On,Min Rds On) :
- 15V
- Datasheets
- 2SK2225-E
N-Channel Tube 12 Ω @ 1A, 15V ±20V 984.7pF @ 30V 1500V TO-3PFM, SC-93-3
2SK2225-E Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 984.7pF @ 30V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2A amps.In this device, the drain-source breakdown voltage is 1.5kV and VGS=1.5kV, so the drain-source breakdown voltage is 1.5kV in this case.A device can conduct a maximum continuous current of [2A] according to its drain current.It is [150 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 7A.A turn-on delay time of 17 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 1500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (15V).
2SK2225-E Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1.5kV voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 7A.
a 1500V drain to source voltage (Vdss)
2SK2225-E Applications
There are a lot of Renesas Electronics America
2SK2225-E applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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