2SK2225-80-E#T2

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Width :

15.5 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Supplier Device Package :

TO-3PFM

Number of Channels :

1 Channel

Terminal Form :

THROUGH-HOLE

Transistor Polarity :

N-Channel

Package Shape :

RECTANGULAR

Number of Elements :

1

FET Type :

N-Channel

FET Feature :

-

Pin Count :

3

Drain to Source Voltage (Vdss) :

1500 V

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3 Full Pack

Terminal Position :

Single

Number of Terminals :

3

Length :

26.5 mm

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Continuous Drain Current Id :

2

Brand Name :

Renesas

Brand :

Renesas Electronics

Subcategory :

MOSFETs

Operating Temperature :

150°C

Product Category :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Type :

MOSFET

Power Dissipation (Max) :

50W (Tc)

Transistor Type :

1 N-Channel

Current - Continuous Drain (Id) @ 25°C :

2A (Ta)

Power Dissipation :

50

RoHS :

Details

Surface Mount :

No

MSL :

MSL 1 - Unlimited

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

12 Ω

Rise Time :

50 ns

Transistor Application :

SWITCHING

Channel Type :

N

Maximum Operating Temperature :

+ 150 C

Rds On (Max) @ Id, Vgs :

12Ohm @ 1A, 15V

Manufacturer :

Renesas Electronics

Input Capacitance (Ciss) (Max) @ Vds :

990 pF @ 10 V

Qualification :

-

Pulsed Drain Current-Max (IDM) :

7 A

Channel Mode :

Enhancement

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On, Min Rds On) :

15V

Product Status :

Active

Height :

5.5 mm

Mounting Style :

Through Hole

DS Breakdown Voltage-Min :

1500 V

Mounting Type :

Through Hole

Case Connection :

Isolated