2SK2103T100

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

2A

Pin Count :

3

JESD-609 Code :

e2

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

60 ns

Current Rating :

2A

Number of Pins :

3

Package / Case :

TO-243AA

Terminal Form :

Flat

Power Dissipation-Max :

500mW Ta

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

400m Ω @ 1A, 10V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

TIN COPPER

HTS Code :

8541.21.00.95

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Radiation Hardening :

No

Number of Terminations :

3

Published :

1998

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Application :

SWITCHING

Number of Elements :

1

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 10V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Lead Free :

Lead Free

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.6Ohm

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2A

Factory Lead Time :

7 Weeks

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Turn On Delay Time :

10 ns

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Turn-Off Delay Time :

60 ns

Time@Peak Reflow Temperature-Max (s) :

10

Rise Time :

25ns

Voltage - Rated DC :

30V

Power Dissipation :

2W