2SK1835-E
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- Mfr.Part #
- 2SK1835-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 4A TO3P
- Stock
- 1,099
- In Stock ：
- 1,099
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 1500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 15V
- Turn-Off Delay Time :
- 230 ns
- Continuous Drain Current (ID) :
- 4A
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 25 ns
- Contact Plating :
- Copper, Tin
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Fall Time (Typ) :
- 80 ns
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 10V
- Drain-source On Resistance-Max :
- 7Ohm
- Rds On (Max) @ Id, Vgs :
- 7 Ω @ 2A, 15V
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Published :
- 2008
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 125W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Single
- Drain Current-Max (Abs) (ID) :
- 4A
- Package / Case :
- TO-3P-3, SC-65-3
- Factory Lead Time :
- 16 Weeks
- Case Connection :
- DRAIN
- Pin Count :
- 4
- Rise Time :
- 80ns
- Packaging :
- Tube
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SK1835-E
N-Channel Tube 7 Ω @ 2A, 15V ±20V 1700pF @ 10V 1500V TO-3P-3, SC-65-3
2SK1835-E Overview
A device's maximum input capacitance is 1700pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 4A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 230 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 1500V drain to source voltage (Vdss).This device uses no drive voltage (15V) to reduce its overall power consumption.
2SK1835-E Features
a continuous drain current (ID) of 4A
the turn-off delay time is 230 ns
a 1500V drain to source voltage (Vdss)
2SK1835-E Applications
There are a lot of Renesas Electronics America
2SK1835-E applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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