2SK1775-E
- Mfr.Part #
- 2SK1775-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 8A TO3P
- Stock
- 39,838
- In Stock :
- 39,838
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 8A
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 130 ns
- Factory Lead Time :
- 16 Weeks
- Power Dissipation-Max :
- 60W Tc
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 8A
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta
- Operating Temperature :
- 150°C TJ
- Rise Time :
- 135ns
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 4A, 10V
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1730pF @ 10V
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 20A
- Turn On Delay Time :
- 25 ns
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 60W
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 185 ns
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- JESD-609 Code :
- e2
- Radiation Hardening :
- No
- Package / Case :
- TO-3P-3, SC-65-3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 900V
- Pin Count :
- 3
- Published :
- 2005
- Mount :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 900V
- Datasheets
- 2SK1775-E

N-Channel Tube 1.6 Ω @ 4A, 10V ±30V 1730pF @ 10V 900V TO-3P-3, SC-65-3
2SK1775-E Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1730pF @ 10V.This device conducts a continuous drain current (ID) of 8A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 8A.When the device is turned off, a turn-off delay time of 185 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 20A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 900V.This transistor requires a drain-source voltage (Vdss) of 900V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
2SK1775-E Features
a continuous drain current (ID) of 8A
the turn-off delay time is 185 ns
based on its rated peak drain current 20A.
a 900V drain to source voltage (Vdss)
2SK1775-E Applications
There are a lot of Renesas Electronics America
2SK1775-E applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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