2SK1518-E
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- Mfr.Part #
- 2SK1518-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 20A TO3P
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Pin Count :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 3050pF @ 10V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.27Ohm
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 80A
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 35 ns
- Turn-Off Delay Time :
- 240 ns
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 20A
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 10A, 10V
- Operating Temperature :
- 150°C TJ
- Drain to Source Voltage (Vdss) :
- 500V
- Packaging :
- Tube
- Number of Pins :
- 3
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 105 ns
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 16 Weeks
- Rise Time :
- 130ns
- Power Dissipation :
- 120W
- DS Breakdown Voltage-Min :
- 500V
- Radiation Hardening :
- No
- Package / Case :
- TO-3P-3, SC-65-3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e2
- Published :
- 2005
- Power Dissipation-Max :
- 120W Tc
- Datasheets
- 2SK1518-E
N-Channel Tube 270m Ω @ 10A, 10V ±30V 3050pF @ 10V 500V TO-3P-3, SC-65-3
2SK1518-E Overview
A device's maximum input capacitance is 3050pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 240 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
2SK1518-E Features
a continuous drain current (ID) of 20A
the turn-off delay time is 240 ns
based on its rated peak drain current 80A.
a 500V drain to source voltage (Vdss)
2SK1518-E Applications
There are a lot of Renesas Electronics America
2SK1518-E applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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