2SK1342-E
- Mfr.Part #
- 2SK1342-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 8A TO3P
- Stock
- 4,994
- In Stock :
- 4,994
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 4
- Factory Lead Time :
- 16 Weeks
- Published :
- 2005
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1730pF @ 10V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 130 ns
- JESD-609 Code :
- e2
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 4A, 10V
- Drain Current-Max (Abs) (ID) :
- 8A
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current (ID) :
- 8A
- Mount :
- Through Hole
- Package / Case :
- TO-3P-3, SC-65-3
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 185 ns
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 900V
- Pulsed Drain Current-Max (IDM) :
- 20A
- DS Breakdown Voltage-Min :
- 900V
- Case Connection :
- DRAIN
- Rise Time :
- 135ns
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Power Dissipation-Max :
- 100W Tc
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 25 ns
- Datasheets
- 2SK1342-E

N-Channel Tube 1.6 Ω @ 4A, 10V ±30V 1730pF @ 10V 900V TO-3P-3, SC-65-3
2SK1342-E Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1730pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 8A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 185 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 20A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 900V in order to maintain normal operation.Operating this transistor requires a 900V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
2SK1342-E Features
a continuous drain current (ID) of 8A
the turn-off delay time is 185 ns
based on its rated peak drain current 20A.
a 900V drain to source voltage (Vdss)
2SK1342-E Applications
There are a lot of Renesas Electronics America
2SK1342-E applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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