2SK1341-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

100W Tc

Operating Temperature :

150°C TJ

Turn On Delay Time :

20 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

15A

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

80ns

Drain Current-Max (Abs) (ID) :

6A

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

900V

Pin Count :

4

Case Connection :

DRAIN

Package / Case :

TO-3P-3, SC-65-3

Factory Lead Time :

16 Weeks

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Fall Time (Typ) :

100 ns

Turn-Off Delay Time :

125 ns

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

6A

Published :

2005

Terminal Position :

Single

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Drain-source On Resistance-Max :

3Ohm

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Number of Elements :

1

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

980pF @ 10V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

3 Ω @ 3A, 10V

JESD-609 Code :

e2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Copper (Sn/Cu)

Drain to Source Voltage (Vdss) :

900V