2SK1340-E
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- Mfr.Part #
- 2SK1340-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 5A TO3P
- Stock
- 2,685
- In Stock ：
- 2,685
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 4Ohm
- Factory Lead Time :
- 16 Weeks
- Turn-Off Delay Time :
- 90 ns
- Drain Current-Max (Abs) (ID) :
- 5A
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta
- Number of Terminations :
- 3
- Published :
- 2006
- Fall Time (Typ) :
- 90 ns
- Rds On (Max) @ Id, Vgs :
- 4 Ω @ 3A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 15 ns
- Number of Pins :
- 3
- Power Dissipation-Max :
- 100W Tc
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 900V
- Gate to Source Voltage (Vgs) :
- 30V
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Rise Time :
- 70ns
- Pin Count :
- 4
- Contact Plating :
- Copper, Silver, Tin
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 100W
- Input Capacitance (Ciss) (Max) @ Vds :
- 740pF @ 10V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 5A
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e2
- DS Breakdown Voltage-Min :
- 900V
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Package / Case :
- TO-3P-3, SC-65-3
- Lead Free :
- Lead Free
- Datasheets
- 2SK1340-E
N-Channel Tube 4 Ω @ 3A, 10V ±30V 740pF @ 10V 900V TO-3P-3, SC-65-3
2SK1340-E Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 740pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 90 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 900V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
2SK1340-E Features
a continuous drain current (ID) of 5A
the turn-off delay time is 90 ns
a 900V drain to source voltage (Vdss)
2SK1340-E Applications
There are a lot of Renesas Electronics America
2SK1340-E applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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