2SK1339-E
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- Mfr.Part #
- 2SK1339-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 3A TO3P
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Turn On Delay Time :
- 10 ns
- Rds On (Max) @ Id, Vgs :
- 7 Ω @ 1.5A, 10V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 425pF @ 10V
- Rise Time :
- 40ns
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 80W Tc
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- 150°C TJ
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Published :
- 2005
- Package / Case :
- TO-3P-3, SC-65-3
- DS Breakdown Voltage-Min :
- 900V
- Pin Count :
- 4
- Factory Lead Time :
- 16 Weeks
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 900V
- JESD-609 Code :
- e2
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 3A
- Turn-Off Delay Time :
- 50 ns
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 3A
- Pulsed Drain Current-Max (IDM) :
- 7A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Fall Time (Typ) :
- 55 ns
- Drain-source On Resistance-Max :
- 7Ohm
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Datasheets
- 2SK1339-E
N-Channel Tube 7 Ω @ 1.5A, 10V ±30V 425pF @ 10V 900V TO-3P-3, SC-65-3
2SK1339-E Overview
A device's maximum input capacitance is 425pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 50 ns.Its maximum pulsed drain current is 7A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 900V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
2SK1339-E Features
a continuous drain current (ID) of 3A
the turn-off delay time is 50 ns
based on its rated peak drain current 7A.
a 900V drain to source voltage (Vdss)
2SK1339-E Applications
There are a lot of Renesas Electronics America
2SK1339-E applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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