2SK1339-E
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- Mfr.Part #
- 2SK1339-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 3A TO3P
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 7Ohm
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 80W Tc
- Transistor Element Material :
- SILICON
- Rise Time :
- 40ns
- Radiation Hardening :
- No
- Pin Count :
- 4
- Fall Time (Typ) :
- 55 ns
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 3A
- Pulsed Drain Current-Max (IDM) :
- 7A
- Continuous Drain Current (ID) :
- 3A
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 10 ns
- Published :
- 2005
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Package / Case :
- TO-3P-3, SC-65-3
- Terminal Position :
- Single
- Factory Lead Time :
- 16 Weeks
- Drain to Source Voltage (Vdss) :
- 900V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e2
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 425pF @ 10V
- Operating Temperature :
- 150°C TJ
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 900V
- Rds On (Max) @ Id, Vgs :
- 7 Ω @ 1.5A, 10V
- Turn-Off Delay Time :
- 50 ns
- Datasheets
- 2SK1339-E
N-Channel Tube 7 Ω @ 1.5A, 10V ±30V 425pF @ 10V 900V TO-3P-3, SC-65-3
2SK1339-E Overview
A device's maximum input capacitance is 425pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 50 ns.Its maximum pulsed drain current is 7A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 900V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
2SK1339-E Features
a continuous drain current (ID) of 3A
the turn-off delay time is 50 ns
based on its rated peak drain current 7A.
a 900V drain to source voltage (Vdss)
2SK1339-E Applications
There are a lot of Renesas Electronics America
2SK1339-E applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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