2SK1317-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

1500V

Package / Case :

TO-3P-3, SC-65-3

Turn On Delay Time :

17 ns

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

15V

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

2.5A

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Power Dissipation :

100W

Turn-Off Delay Time :

110 ns

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Mounting Type :

Through Hole

Manufacturer Package Identifier :

PRSS0004ZE-A

Rise Time :

70ns

Pbfree Code :

yes

Lead Free :

Lead Free

Number of Elements :

1

Nominal Vgs :

4 V

Terminal Position :

Single

Factory Lead Time :

16 Weeks

Number of Terminations :

3

Power Dissipation-Max :

100W Tc

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 10V

Pulsed Drain Current-Max (IDM) :

7A

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

12 Ω @ 2A, 15V

Fall Time (Typ) :

60 ns

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Published :

1999

Packaging :

Tube