2SJ681(Q)

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Mfr.Part #
2SJ681(Q)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-251-3 Stub Leads, IPak
Datasheet
Download
Description
MOSFET P-CH 60V 5A PW-MOLD2
Stock
43,039
In Stock :
43,039

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
60V
Rds On (Max) @ Id, Vgs :
170m Ω @ 2.5A, 10V
Power Dissipation :
20W
Mount :
Through Hole
Mounting Type :
Through Hole
Operating Temperature :
150°C TJ
Package / Case :
TO-251-3 Stub Leads, IPak
Drive Voltage (Max Rds On,Min Rds On) :
4V 10V
Vgs(th) (Max) @ Id :
2V @ 1mA
FET Type :
P-Channel
Number of Pins :
3
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
5A
Number of Elements :
1
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
5A Ta
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max :
20W Ta
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
700pF @ 10V
Published :
2009
Packaging :
Bulk
Vgs (Max) :
±20V
Datasheets
2SJ681(Q)
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation 2SJ681(Q) from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-251-3 Stub Leads, IPak, Number of Pins:3, 2SJ681(Q) pinout, 2SJ681(Q) datasheet PDF, 2SJ681(Q) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation 2SJ681(Q) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SJ681(Q)


P-Channel Bulk 170m Ω @ 2.5A, 10V ±20V 700pF @ 10V 15nC @ 10V 60V TO-251-3 Stub Leads, IPak

2SJ681(Q) Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 700pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4V 10V), this device contributes to a reduction in overall power consumption.

2SJ681(Q) Features


a continuous drain current (ID) of 5A
a 60V drain to source voltage (Vdss)


2SJ681(Q) Applications


There are a lot of Toshiba Semiconductor and Storage
2SJ681(Q) applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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