2SJ661-DL-1E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

2 Weeks

Power Dissipation-Max :

1.65W Ta 65W Tc

Drain to Source Breakdown Voltage :

-4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Continuous Drain Current (ID) :

38A

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

4360pF @ 20V

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rds On (Max) @ Id, Vgs :

39m Ω @ 19A, 10V

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

38A Ta

Power Dissipation :

1.65W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2012

Lead Free :

Lead Free

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)