2SJ661-1E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

4360pF @ 20V

Drain to Source Voltage (Vdss) :

60V

Drain to Source Breakdown Voltage :

-60V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

195 ns

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

1.65W Ta 65W Tc

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

38A

Published :

2012

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

JESD-609 Code :

e3

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

295 ns

Turn On Delay Time :

33 ns

FET Type :

P-Channel

Lead Free :

Lead Free

Packaging :

Tube

Rise Time :

285ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

39m Ω @ 19A, 10V

Factory Lead Time :

2 Weeks

Current - Continuous Drain (Id) @ 25°C :

38A Ta

Mount :

Through Hole

Pbfree Code :

yes