2SJ656

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

340 ns

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

18A

Lead Free :

Lead Free

FET Type :

P-Channel

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 20V

Fall Time (Typ) :

125 ns

RoHS Status :

RoHS Compliant

Operating Mode :

Depletion Mode

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Terminal Finish :

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

75.5m Ω @ 9A, 10V

Transistor Element Material :

SILICON

Number of Elements :

1

Mounting Type :

Through Hole

Mount :

Through Hole

Power Dissipation-Max :

2W Ta 30W Tc

Dual Supply Voltage :

100V

Package / Case :

TO-220-3 Full Pack

Turn On Delay Time :

30 ns

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

18A Ta

ECCN Code :

EAR99

HTS Code :

8541.29.00.95

Rise Time :

110ns

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

72A

Published :

2004

Termination :

Through Hole

Number of Terminations :

3

Case Connection :

Isolated

Power Dissipation :

2W

Drain-source On Resistance-Max :

0.104Ohm

Nominal Vgs :

2.6 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-100V

Pin Count :

3