2SJ652

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

310 ns

Rise Time :

210ns

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Operating Mode :

Depletion Mode

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Drain to Source Breakdown Voltage :

-60V

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

38m Ω @ 14A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

4360pF @ 20V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

112A

Current - Continuous Drain (Id) @ 25°C :

28A Ta

Number of Elements :

1

Continuous Drain Current (ID) :

28A

Element Configuration :

Single

Power Dissipation-Max :

2W Ta 30W Tc

HTS Code :

8541.29.00.95

Drain to Source Voltage (Vdss) :

60V

Gate to Source Voltage (Vgs) :

20V

Published :

2003

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Case Connection :

Isolated

FET Type :

P-Channel

Packaging :

Bulk

Mount :

Through Hole

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0555Ohm

Turn On Delay Time :

33 ns

Number of Terminations :

3

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Power Dissipation :

30W

Terminal Finish :

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Fall Time (Typ) :

180 ns

Pbfree Code :

yes

Pin Count :

3