2SJ652

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

30W

Input Capacitance (Ciss) (Max) @ Vds :

4360pF @ 20V

Packaging :

Bulk

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

28A Ta

Operating Mode :

Depletion Mode

Drain to Source Breakdown Voltage :

-60V

Turn On Delay Time :

33 ns

Transistor Application :

SWITCHING

Published :

2003

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

310 ns

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rise Time :

210ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

112A

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Number of Terminations :

3

Drain-source On Resistance-Max :

0.0555Ohm

Element Configuration :

Single

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

38m Ω @ 14A, 10V

Case Connection :

Isolated

FET Type :

P-Channel

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

2W Ta 30W Tc

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

HTS Code :

8541.29.00.95

Mount :

Through Hole

Terminal Finish :

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Continuous Drain Current (ID) :

28A

Pin Count :

3

Pbfree Code :

yes

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

60V

Fall Time (Typ) :

180 ns

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V