2SJ652

Manufacturer :

Sanyo

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

28A Ta

Operating Temperature :

150°C TJ

Rise Time :

210ns

Number of Terminations :

3

Packaging :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Published :

2003

Case Connection :

Isolated

Power Dissipation :

30W

Pbfree Code :

yes

Pin Count :

3

Continuous Drain Current (ID) :

28A

Drain-source On Resistance-Max :

0.0555Ohm

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

180 ns

Rds On (Max) @ Id, Vgs :

38m Ω @ 14A, 10V

Mount :

Through Hole

Transistor Element Material :

SILICON

Power Dissipation-Max :

2W Ta 30W Tc

Terminal Finish :

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4360pF @ 20V

Drain to Source Breakdown Voltage :

-60V

Turn On Delay Time :

33 ns

Drain to Source Voltage (Vdss) :

60V

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3 Full Pack

Turn-Off Delay Time :

310 ns

Operating Mode :

Depletion Mode

FET Type :

P-Channel

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

112A

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Element Configuration :

Single

Radiation Hardening :

No