2SJ652

Manufacturer :

Sanyo

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4360pF @ 20V

Packaging :

Bulk

Number of Pins :

3

Fall Time (Typ) :

180 ns

Transistor Element Material :

SILICON

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

Depletion Mode

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Lead Free :

Lead Free

Terminal Finish :

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Pin Count :

3

Power Dissipation-Max :

2W Ta 30W Tc

Turn-Off Delay Time :

310 ns

Rise Time :

210ns

Pulsed Drain Current-Max (IDM) :

112A

Number of Elements :

1

Published :

2003

Continuous Drain Current (ID) :

28A

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

38m Ω @ 14A, 10V

JEDEC-95 Code :

TO-220AB

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Mount :

Through Hole

Power Dissipation :

30W

Number of Terminations :

3

Drain to Source Breakdown Voltage :

-60V

Turn On Delay Time :

33 ns

Operating Temperature :

150°C TJ

Mounting Type :

Through Hole

Pbfree Code :

yes

Package / Case :

TO-220-3 Full Pack

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.0555Ohm

Current - Continuous Drain (Id) @ 25°C :

28A Ta

Element Configuration :

Single

HTS Code :

8541.29.00.95

Transistor Application :

SWITCHING

Vgs (Max) :

±20V