2SJ650

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

48A

Power Dissipation-Max :

2W Ta 20W Tc

Pin Count :

3

Number of Terminations :

3

Case Connection :

Isolated

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Drain-source On Resistance-Max :

0.205Ohm

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Mounting Type :

Through Hole

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

135m Ω @ 6A, 10V

Operating Mode :

Depletion Mode

DS Breakdown Voltage-Min :

60V

Number of Elements :

1

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 20V

Package / Case :

TO-220-3 Full Pack

Drain Current-Max (Abs) (ID) :

12A

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Packaging :

Bulk

Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)