2SJ168TE85LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

FET Type :

P-Channel

Drain-source On Resistance-Max :

2Ohm

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.95

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Surface Mount :

yes

Configuration :

Single

Packaging :

Cut Tape (CT)

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

200mW Ta

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G3

Pin Count :

3

Operating Temperature :

150°C TJ

Terminal Position :

Dual

Number of Terminations :

3

Published :

2009

Drain to Source Voltage (Vdss) :

60V

Feedback Cap-Max (Crss) :

22 pF

Rds On (Max) @ Id, Vgs :

2 Ω @ 50mA, 10V

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain Current-Max (Abs) (ID) :

0.2A

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 10V

Factory Lead Time :

52 Weeks

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1