2SD667L-D-AP
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- Mfr.Part #
- 2SD667L-D-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO92L
- Stock
- 20,711
- In Stock ：
- 20,711
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 900mW
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Frequency - Transition :
- 140MHz
- Current - Collector (Ic) (Max) :
- 1A
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 150mA 5V
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Datasheets
- 2SD667L-D-AP
NPN -55°C~150°C TJ 10μA ICBO TO-226-3, TO-92-3 Long Body (Formed Leads) Through Hole
2SD667L-D-AP Overview
In this device, the DC current gain is 160 @ 150mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.The device exhibits a collector-emitter breakdown at 80V.
2SD667L-D-AP Features
the DC current gain for this device is 160 @ 150mA 5V
the vce saturation(Max) is 1V @ 50mA, 500mA
2SD667L-D-AP Applications
There are a lot of Micro Commercial Co
2SD667L-D-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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