2SD1963T100S
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- Mfr.Part #
- 2SD1963T100S
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 3A MPT3
- Stock
- 13,290
- In Stock ：
- 13,290
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 270
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 50V
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-F3
- Max Collector Current :
- 3A
- Current Rating :
- 3A
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- HTS Code :
- 8541.21.00.75
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-243AA
- Transition Frequency :
- 150MHz
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Max Power Dissipation :
- 2W
- JESD-609 Code :
- e2
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 20V
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Voltage (VCEO) :
- 450mV
- Gain Bandwidth Product :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 150mA, 1.5A
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Terminal Finish :
- TIN COPPER
- Voltage - Rated DC :
- 20V
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Published :
- 2005
- Datasheets
- 2SD1963T100S
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1963T100S Overview
In this device, the DC current gain is 270 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 150mA, 1.5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).150MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
2SD1963T100S Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 450mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 150MHz
2SD1963T100S Applications
There are a lot of ROHM Semiconductor
2SD1963T100S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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