2SD1864TV2Q
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- Mfr.Part #
- 2SD1864TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A ATV
- Stock
- 27,993
- In Stock ：
- 27,993
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.29.00.75
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- hFE Min :
- 120
- Max Power Dissipation :
- 625mW
- Published :
- 2001
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 200mA
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 80V
- Mounting Type :
- Through Hole
- Base Part Number :
- 2SD1864
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Box (TB)
- Current Rating :
- 3A
- Element Configuration :
- Single
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Finish :
- TIN SILVER COPPER
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-30 Code :
- R-PSIP-T3
- Number of Elements :
- 1
- Transition Frequency :
- 90MHz
- Collector Emitter Voltage (VCEO) :
- 200mV
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Package / Case :
- 3-SIP
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Power - Max :
- 1W
- Voltage - Rated DC :
- 50V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e1
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 90MHz
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2SD1864TV2Q
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1864TV2Q Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 90MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
2SD1864TV2Q Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
2SD1864TV2Q Applications
There are a lot of ROHM Semiconductor
2SD1864TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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