2SD1864TV2Q
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- Mfr.Part #
- 2SD1864TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A ATV
- Stock
- 27,993
- In Stock ：
- 27,993
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 625mW
- HTS Code :
- 8541.29.00.75
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Qualification Status :
- Not Qualified
- Collector Emitter Breakdown Voltage :
- 50V
- Max Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Current Rating :
- 3A
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2001
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 200mA
- Mount :
- Through Hole
- Transistor Type :
- NPN
- JESD-30 Code :
- R-PSIP-T3
- Transition Frequency :
- 90MHz
- Package / Case :
- 3-SIP
- JESD-609 Code :
- e1
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 120
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Base Part Number :
- 2SD1864
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Gain Bandwidth Product :
- 90MHz
- Packaging :
- Tape and Box (TB)
- Collector Emitter Voltage (VCEO) :
- 200mV
- Power - Max :
- 1W
- ECCN Code :
- EAR99
- Terminal Finish :
- TIN SILVER COPPER
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Datasheets
- 2SD1864TV2Q
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1864TV2Q Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 90MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
2SD1864TV2Q Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
2SD1864TV2Q Applications
There are a lot of ROHM Semiconductor
2SD1864TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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