2SD1858TV2P

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Mfr.Part #
2SD1858TV2P
Manufacturer
ROHM Semiconductor
Package / Case
3-SIP
Datasheet
Download
Description
TRANS NPN 32V 1A ATV
Stock
960
In Stock :
960

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e1
Number of Terminations :
3
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
400mV @ 50mA, 500mA
Collector Emitter Voltage (VCEO) :
400mV
Transistor Application :
SWITCHING
Package / Case :
3-SIP
Mounting Type :
Through Hole
Max Power Dissipation :
1W
Emitter Base Voltage (VEBO) :
5V
Peak Reflow Temperature (Cel) :
260
Polarity/Channel Type :
NPN
Pin Count :
3
JESD-30 Code :
R-PSIP-T3
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
32V
Current - Collector Cutoff (Max) :
500nA ICBO
Max Collector Current :
1A
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
TIN SILVER COPPER
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Collector Base Voltage (VCBO) :
40V
Number of Elements :
1
Packaging :
Tape and Box (TB)
DC Current Gain (hFE) (Min) @ Ic, Vce :
82 @ 100mA 3V
Voltage - Rated DC :
32V
hFE Min :
120
Current Rating :
1A
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
10
Gain Bandwidth Product :
150MHz
Transition Frequency :
150MHz
Published :
1998
Transistor Type :
NPN
Mount :
Through Hole
Datasheets
2SD1858TV2P
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD1858TV2P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:3-SIP, Mounting Type:Through Hole, Operating Temperature:150°C TJ, 2SD1858TV2P pinout, 2SD1858TV2P datasheet PDF, 2SD1858TV2P amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD1858TV2P ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SD1858TV2P


NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole

2SD1858TV2P Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 82 @ 100mA 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 150MHz is present in the part.Collector current can be as low as 1A volts at its maximum.

2SD1858TV2P Features


the DC current gain for this device is 82 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz


2SD1858TV2P Applications


There are a lot of ROHM Semiconductor
2SD1858TV2P applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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