2SD1835T
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- Mfr.Part #
- 2SD1835T
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A 3NP
- Stock
- 20,048
- In Stock ：
- 20,048
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Operating Temperature :
- 150°C TJ
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 750mW
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Frequency - Transition :
- 150MHz
- Current - Collector (Ic) (Max) :
- 2A
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Supplier Device Package :
- 3-NP
- Datasheets
- 2SD1835T
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2SD1835T Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 1A.Supplier device package 3-NP comes with the product.The device exhibits a collector-emitter breakdown at 50V.
2SD1835T Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the supplier device package of 3-NP
2SD1835T Applications
There are a lot of Rochester Electronics, LLC
2SD1835T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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