2SD1816T-TL-E
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- Mfr.Part #
- 2SD1816T-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A TPFA
- Stock
- 10,225
- In Stock ：
- 10,225
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e6
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 200mA, 2A
- Polarity/Channel Type :
- NPN
- Published :
- 2012
- Number of Pins :
- 3
- Width :
- 5.5mm
- Height :
- 2.3mm
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- 2SD1816
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 130MHz
- Transition Frequency :
- 180MHz
- Length :
- 6.5mm
- Frequency - Transition :
- 180MHz
- Collector Base Voltage (VCBO) :
- 120V
- HTS Code :
- 8541.29.00.75
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 400mV
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Collector Current :
- 4A
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 100V
- Max Frequency :
- 180MHz
- Datasheets
- 2SD1816T-TL-E
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1816T-TL-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 200mA, 2A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 180MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
2SD1816T-TL-E Features
the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
2SD1816T-TL-E Applications
There are a lot of ON Semiconductor
2SD1816T-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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