2SD1816S-TL-E
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- Mfr.Part #
- 2SD1816S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A TPFA
- Stock
- 531
- In Stock ：
- 531
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 4A
- Frequency - Transition :
- 180MHz
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 2 Weeks
- HTS Code :
- 8541.29.00.75
- Max Power Dissipation :
- 1W
- Collector Emitter Saturation Voltage :
- 400mV
- Width :
- 5.5mm
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 200mA, 2A
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 5V
- Gain Bandwidth Product :
- 130MHz
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Published :
- 2012
- Base Part Number :
- 2SD1816
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Element Configuration :
- Single
- Number of Terminations :
- 2
- JESD-609 Code :
- e6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 120V
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 180MHz
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Length :
- 6.5mm
- Max Frequency :
- 180MHz
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Height :
- 2.3mm
- Number of Pins :
- 3
- Datasheets
- 2SD1816S-TL-E
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1816S-TL-E Overview
In this device, the DC current gain is 140 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 200mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.180MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2SD1816S-TL-E Features
the DC current gain for this device is 140 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
2SD1816S-TL-E Applications
There are a lot of ON Semiconductor
2SD1816S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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