2SD1816S-H
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- Mfr.Part #
- 2SD1816S-H
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A TP
- Stock
- 49,814
- In Stock ：
- 49,814
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1W
- Configuration :
- Single
- Published :
- 2013
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 5V
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Collector Emitter Breakdown Voltage :
- 100V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 4A
- Transistor Type :
- NPN
- Base Part Number :
- 2SD1816
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Halogen Free :
- Halogen Free
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- HTS Code :
- 8541.29.00.75
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e6
- Number of Pins :
- 3
- Factory Lead Time :
- 2 Weeks
- Power - Max :
- 1W
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 200mA, 2A
- Surface Mount :
- No
- Frequency - Transition :
- 180MHz
- hFE Min :
- 70
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 120V
- Transition Frequency :
- 180MHz
- Datasheets
- 2SD1816S-H
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1816S-H Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 140 @ 500mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.When collector current reaches its maximum, it can reach 4A volts.
2SD1816S-H Features
the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
2SD1816S-H Applications
There are a lot of ON Semiconductor
2SD1816S-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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