2SD1803T-TL-H
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- Mfr.Part #
- 2SD1803T-TL-H
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 50V 5A TP-FA
- Stock
- 1,354
- In Stock ：
- 1,354
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Halogen Free :
- Halogen Free
- Max Collector Current :
- 5A
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 3A
- Collector Emitter Saturation Voltage :
- 400mV
- Published :
- 2011
- Collector Emitter Breakdown Voltage :
- 50V
- Frequency - Transition :
- 180MHz
- Pin Count :
- 3
- Element Configuration :
- Single
- Width :
- 5.5mm
- hFE Min :
- 70
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Max Frequency :
- 180MHz
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Base Part Number :
- 2SD1803
- Height :
- 2.3mm
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 1W
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Length :
- 6.5mm
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- 2SD1803T-TL-H
NPN 150°C TJ 1μA ICBO TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1803T-TL-H Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 150mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.During maximum operation, collector current can be as low as 5A volts.
2SD1803T-TL-H Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
2SD1803T-TL-H Applications
There are a lot of ON Semiconductor
2SD1803T-TL-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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