2SD1796
- Mfr.Part #
- 2SD1796
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO220F
- Stock
- 259
- In Stock :
- 259
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package :
- Bulk
- Package / Case :
- TO-220-3 Full Pack
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 10mA, 3A
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Factory Lead Time :
- 12 Weeks
- JEDEC-95 Code :
- TO-220AB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A 4V
- RoHS Status :
- RoHS Compliant
- Collector Current-Max (IC) :
- 4 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Series :
- --
- Number of Terminals :
- 3
- Max Collector Current :
- 4A
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Frequency - Transition :
- 60MHz
- Terminal Position :
- Single
- Power - Max :
- 25W
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- RoHS :
- Compliant
- Case Connection :
- Isolated
- Max Power Dissipation :
- 25W
- Power Dissipation-Max (Abs) :
- 25 W
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Collector Emitter Breakdown Voltage :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- DC Current Gain-Min (hFE) :
- 2000
- Manufacturer :
- Sanken Electric Co Ltd
- Number of Terminations :
- 3
- Terminal Form :
- THROUGH-HOLE
- Product Status :
- Obsolete
- Current - Collector (Ic) (Max) :
- 4A
- Supplier Device Package :
- TO-220F
- Mount :
- Through Hole
- Surface Mount :
- No
- Pin Count :
- 3
- Collector-Emitter Voltage-Max :
- 50 V
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Bulk
- Published :
- 2001
- Transition Frequency :
- 60MHz
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Unknown
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- Datasheets
- 2SD1796

NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Bulk Through Hole
2SD1796 Overview
This device has a DC current gain of 2000 @ 3A 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 60MHz.Single BJT transistor comes in a supplier device package of TO-220F.Maximum collector-emitter voltage can be set to 50 V.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.The maximum collector current is 4A volts.
2SD1796 Features
the DC current gain for this device is 2000 @ 3A 4V
the vce saturation(Max) is 1.5V @ 10mA, 3A
a transition frequency of 60MHz
the supplier device package of TO-220F
2SD1796 Applications
There are a lot of Sanken
2SD1796 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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