2SD1781KT146Q
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- Mfr.Part #
- 2SD1781KT146Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.8A SMT3
- Stock
- 10,398
- In Stock ：
- 10,398
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 32V
- Gain Bandwidth Product :
- 150MHz
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 32V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 32V
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- Base Part Number :
- 2SD1781
- Transition Frequency :
- 150MHz
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 100mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 800mA
- Pin Count :
- 3
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Factory Lead Time :
- 13 Weeks
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 40V
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Current Rating :
- 800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Continuous Collector Current :
- 800mA
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- HTS Code :
- 8541.21.00.75
- Max Breakdown Voltage :
- 32V
- VCEsat-Max :
- 0.4 V
- Contact Plating :
- Copper, Silver, Tin
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 120
- Published :
- 1998
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Datasheets
- 2SD1781KT146Q
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1781KT146Q Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 100mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 800mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.The breakdown input voltage is 32V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
2SD1781KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 150MHz
2SD1781KT146Q Applications
There are a lot of ROHM Semiconductor
2SD1781KT146Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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