2SD1628F-TD-H

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Mfr.Part #
2SD1628F-TD-H
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 20V 5A PCP
Stock
120,992
In Stock :
120,992

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Frequency :
120MHz
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
RoHS Status :
ROHS3 Compliant
Operating Temperature :
150°C TJ
Reach Compliance Code :
not_compliant
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Emitter Base Voltage (VEBO) :
6V
Height :
1.5mm
Length :
4.5mm
Package / Case :
TO-243AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
20V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 60mA, 3A
Mounting Type :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 500mA 2V
Current - Collector Cutoff (Max) :
100nA ICBO
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
Max Power Dissipation :
500mW
Pbfree Code :
yes
Halogen Free :
Halogen Free
Width :
2.5mm
Factory Lead Time :
8 Weeks
Element Configuration :
Single
Published :
1999
JESD-609 Code :
e6
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
500mV
Frequency - Transition :
120MHz
Collector Base Voltage (VCBO) :
60V
Max Collector Current :
5A
Collector Emitter Voltage (VCEO) :
500mV
Number of Pins :
3
Transistor Type :
NPN
Pin Count :
3
Datasheets
2SD1628F-TD-H
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SD1628F-TD-H from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-243AA, Mounting Type:Surface Mount, Number of Pins:3, 2SD1628F-TD-H pinout, 2SD1628F-TD-H datasheet PDF, 2SD1628F-TD-H amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SD1628F-TD-H ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SD1628F-TD-H


NPN 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount

2SD1628F-TD-H Overview


In this device, the DC current gain is 120 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 60mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 5A volts.

2SD1628F-TD-H Features


the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V


2SD1628F-TD-H Applications


There are a lot of ON Semiconductor
2SD1628F-TD-H applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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