2SD1207S-AE
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- Mfr.Part #
- 2SD1207S-AE
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A 3MP
- Stock
- 27,447
- In Stock ：
- 27,447
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Frequency - Transition :
- 150MHz
- Power - Max :
- 1W
- Current - Collector (Ic) (Max) :
- 2A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Supplier Device Package :
- 3-MP
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SD1207S-AE
,TO-226_bentlead.jpg)
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
2SD1207S-AE Overview
DC current gain in this device equals 100 @ 100mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 1A.Product comes in 3-MP supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SD1207S-AE Features
the DC current gain for this device is 100 @ 100mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the supplier device package of 3-MP
2SD1207S-AE Applications
There are a lot of Rochester Electronics, LLC
2SD1207S-AE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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