2SD1060S-1EX
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- Mfr.Part #
- 2SD1060S-1EX
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 5A TO220-3
- Stock
- 21,601
- In Stock ：
- 21,601
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Mounting Type :
- Through Hole
- Power - Max :
- 1.75W
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 5A
- Transistor Type :
- NPN
- Frequency - Transition :
- 30MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 1A 2V
- Max Power Dissipation :
- 1.75W
- Collector Emitter Voltage (VCEO) :
- 300mV
- Published :
- 2013
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-220-3
- Radiation Hardening :
- No
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 3A
- Number of Pins :
- 3
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SD1060S-1EX
NPN 150°C TJ 100μA ICBO TO-220-3 Tube Through Hole
2SD1060S-1EX Overview
In this device, the DC current gain is 140 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 300mA, 3A.Maximum collector currents can be below 5A volts.
2SD1060S-1EX Features
the DC current gain for this device is 140 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A
2SD1060S-1EX Applications
There are a lot of ON Semiconductor
2SD1060S-1EX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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