2SD1060S-1E
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- Mfr.Part #
- 2SD1060S-1E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 5A TO220-3
- Stock
- 256
- In Stock ：
- 256
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 60V
- Frequency - Transition :
- 30MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 1A 2V
- Max Collector Current :
- 5A
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1.75W
- Power - Max :
- 1.75W
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 3A
- Published :
- 2005
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Tube
- Mount :
- Through Hole
- Factory Lead Time :
- 9 Weeks
- Package / Case :
- TO-220-3
- Datasheets
- 2SD1060S-1E
NPN 150°C TJ 100μA ICBO TO-220-3 Tube Through Hole
2SD1060S-1E Overview
This device has a DC current gain of 140 @ 1A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A maximum collector current of 5A volts is possible.
2SD1060S-1E Features
the DC current gain for this device is 140 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
2SD1060S-1E Applications
There are a lot of ON Semiconductor
2SD1060S-1E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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