2SC2881-Y(TE12L,ZC

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Collector Emitter Breakdown (Max) :

120 V

Terminal Form :

Flat

Transition Frequency :

120

Power - Max :

500 mW

Power Dissipation :

1

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-F3

Transistor Polarity :

NPN

Surface Mount :

yes

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Continuous Collector Current :

800

Frequency - Transition :

120MHz

Package / Case :

TO-243AA

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Supplier Device Package :

PW-Mini

Product Status :

Active

Product Category :

Bipolar Transistors - BJT

RoHS :

Non-Compliant

Maximum Operating Temperature :

+ 150 C

Product Type :

BJTs - Bipolar Transistors

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Style :

SMD/SMT

Configuration :

Single

Factory Lead Time :

12 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA, 5V

Operating Temperature :

150°C (TJ)

Packaging :

MouseReel

Package :

Digi-Reel?

DC Current Gain-Min (hFE) :

120

Collector-Emitter Voltage-Max :

120 V

Transistor Type :

NPN

Reach Compliance Code :

Unknown

Number of Elements :

1

Collector Current-Max (IC) :

0.8 A

Current - Collector (Ic) (Max) :

800 mA

Subcategory :

Transistors

Transistor Application :

AMPLIFIER

Manufacturer :

Toshiba

Series :

-

Case Connection :

COLLECTOR

Brand :

Toshiba

Terminal Position :

Single

Number of Terminals :

3

Current - Collector Cutoff (Max) :

100nA (ICBO)

Minimum Operating Temperature :

-