2SC2881-Y(TE12L,ZC

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

Configuration :

Single

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

120 V

Collector-Emitter Voltage-Max :

120 V

Current - Collector (Ic) (Max) :

800 mA

Case Connection :

COLLECTOR

Package / Case :

TO-243AA

Power Dissipation :

1

Number of Terminals :

3

Factory Lead Time :

12 Weeks

Collector Current-Max (IC) :

0.8 A

Maximum Operating Temperature :

+ 150 C

DC Current Gain-Min (hFE) :

120

Transistor Type :

NPN

Transistor Polarity :

NPN

Surface Mount :

yes

Number of Elements :

1

Transition Frequency :

120

Product Category :

Bipolar Transistors - BJT

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-F3

Packaging :

MouseReel

Supplier Device Package :

PW-Mini

Mounting Style :

SMD/SMT

Frequency - Transition :

120MHz

Product Status :

Active

Terminal Form :

Flat

Continuous Collector Current :

800

Terminal Position :

Single

Subcategory :

Transistors

RoHS :

Non-Compliant

Package :

Digi-Reel?

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Manufacturer :

Toshiba

Reach Compliance Code :

Unknown

Current - Collector Cutoff (Max) :

100nA (ICBO)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Type :

BJTs - Bipolar Transistors

Polarity/Channel Type :

NPN

Series :

-

Operating Temperature :

150°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA, 5V

Transistor Application :

AMPLIFIER

Brand :

Toshiba

Power - Max :

500 mW

Package Shape :

RECTANGULAR

Minimum Operating Temperature :

-