2SC2713-GR,LF

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Mfr.Part #
2SC2713-GR,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 120V 0.1A TO236
Stock
44,575
In Stock :
44,575

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency - Transition :
100MHz
Max Collector Current :
100mA
Max Breakdown Voltage :
120V
Transistor Type :
NPN
Collector Emitter Breakdown Voltage :
120V
Current - Collector Cutoff (Max) :
100nA ICBO
Emitter Base Voltage (VEBO) :
5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
120V
Packaging :
Cut Tape (CT)
Collector Emitter Voltage (VCEO) :
300mV
RoHS Status :
RoHS Compliant
Operating Temperature :
125°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 6V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 1mA, 10mA
Max Power Dissipation :
150mW
Mounting Type :
Surface Mount
Factory Lead Time :
12 Weeks
Mount :
Surface Mount
Power - Max :
150mW
Package / Case :
TO-236-3, SC-59, SOT-23-3
Published :
2014
Datasheets
2SC2713-GR,LF
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SC2713-GR,LF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:125°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, 2SC2713-GR,LF pinout, 2SC2713-GR,LF datasheet PDF, 2SC2713-GR,LF amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SC2713-GR,LF ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SC2713-GR,LF


NPN 125°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount

2SC2713-GR,LF Overview


In this device, the DC current gain is 200 @ 2mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

2SC2713-GR,LF Features


the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V


2SC2713-GR,LF Applications


There are a lot of Toshiba Semiconductor and Storage
2SC2713-GR,LF applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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