2SC2712-GR,LF

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Mfr.Part #
2SC2712-GR,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 50V 0.15A SMINI
Stock
15,827
In Stock :
15,827

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
150mW
Collector Emitter Voltage (VCEO) :
50V
Reach Compliance Code :
Unknown
Gain Bandwidth Product :
80MHz
Published :
2014
Transistor Type :
NPN
Max Collector Current :
150mA
Base Part Number :
2SC2712
Collector Emitter Saturation Voltage :
100mV
Factory Lead Time :
12 Weeks
Emitter Base Voltage (VEBO) :
5V
Max Breakdown Voltage :
50V
Operating Temperature :
125°C TJ
Power - Max :
150mW
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Collector Emitter Breakdown Voltage :
50V
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 2mA 6V
Mount :
Surface Mount
Current - Collector Cutoff (Max) :
100nA ICBO
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
60V
RoHS Status :
RoHS Compliant
Element Configuration :
Single
Packaging :
Tape and Reel (TR)
Datasheets
2SC2712-GR,LF
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SC2712-GR,LF from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2SC2712, Operating Temperature:125°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, 2SC2712-GR,LF pinout, 2SC2712-GR,LF datasheet PDF, 2SC2712-GR,LF amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SC2712-GR,LF ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SC2712-GR,LF


NPN 125°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

2SC2712-GR,LF Overview


DC current gain in this device equals 70 @ 2mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 150mA volts.

2SC2712-GR,LF Features


the DC current gain for this device is 70 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V


2SC2712-GR,LF Applications


There are a lot of Toshiba Semiconductor and Storage
2SC2712-GR,LF applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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