2SC2383-O,T6ALPF(M
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- Mfr.Part #
- 2SC2383-O,T6ALPF(M
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 160V 1A TO92MOD
- Stock
- 1,046
- In Stock ：
- 1,046
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1A
- Published :
- 2009
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 200mA 5V
- Power - Max :
- 900mW
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Bulk
- Frequency - Transition :
- 100MHz
- Datasheets
- 2SC2383-O,T6ALPF(M
NPN 150°C TJ 1μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SC2383-O,T6ALPF(M Overview
This device has a DC current gain of 60 @ 200mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 160V maximal voltage is present.
2SC2383-O,T6ALPF(M Features
the DC current gain for this device is 60 @ 200mA 5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
2SC2383-O,T6ALPF(M Applications
There are a lot of Toshiba Semiconductor and Storage
2SC2383-O,T6ALPF(M applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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