2SC2235-O(T6FJT,AF
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- Mfr.Part #
- 2SC2235-O(T6FJT,AF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.8A TO92MOD
- Stock
- 21,564
- In Stock ：
- 21,564
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Frequency - Transition :
- 120MHz
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Power - Max :
- 900mW
- Current - Collector (Ic) (Max) :
- 800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 100mA 5V
- Published :
- 2009
- Supplier Device Package :
- TO-92MOD
- Packaging :
- Bulk
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SC2235-O(T6FJT,AF
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SC2235-O(T6FJT,AF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 100mA 5V.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-92MOD contains the product.The device has a 120V maximal voltage - Collector Emitter Breakdown.
2SC2235-O(T6FJT,AF Features
the DC current gain for this device is 80 @ 100mA 5V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-92MOD
2SC2235-O(T6FJT,AF Applications
There are a lot of Toshiba Semiconductor and Storage
2SC2235-O(T6FJT,AF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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