2SC1959-GR-AP
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- Mfr.Part #
- 2SC1959-GR-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO92
- Stock
- 49,320
- In Stock ：
- 49,320
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- Compliant
- Qualification Status :
- Not Qualified
- Transistor Type :
- NPN
- Packaging :
- Tape and Box (TB)
- Configuration :
- Single
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- O-PBCY-W3
- Number of Elements :
- 1
- Terminal Form :
- Wire
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Surface Mount :
- No
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Power - Max :
- 500mW
- Terminal Finish :
- Matte Tin (Sn)
- Current - Collector (Ic) (Max) :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 300MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Frequency - Transition :
- 300MHz
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Datasheets
- 2SC1959-GR-AP
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2SC1959-GR-AP Overview
In this device, the DC current gain is 200 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
2SC1959-GR-AP Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 300MHz
2SC1959-GR-AP Applications
There are a lot of Micro Commercial Co
2SC1959-GR-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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