2SC1959-GR-AP
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- Mfr.Part #
- 2SC1959-GR-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO92
- Stock
- 49,320
- In Stock ：
- 49,320
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transistor Type :
- NPN
- Terminal Form :
- Wire
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Box (TB)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Frequency - Transition :
- 300MHz
- RoHS Status :
- RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 1V
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Power - Max :
- 500mW
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- O-PBCY-W3
- Transition Frequency :
- 300MHz
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Reach Compliance Code :
- Compliant
- Current - Collector (Ic) (Max) :
- 500mA
- Datasheets
- 2SC1959-GR-AP
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2SC1959-GR-AP Overview
In this device, the DC current gain is 200 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
2SC1959-GR-AP Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 300MHz
2SC1959-GR-AP Applications
There are a lot of Micro Commercial Co
2SC1959-GR-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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