2SB1316TL
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- Mfr.Part #
- 2SB1316TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A CPT3
- Stock
- 30,000
- In Stock ：
- 30,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 100V
- Contact Plating :
- Copper, Tin
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 2
- hFE Min :
- 1000
- Current Rating :
- -2A
- JESD-30 Code :
- R-PSSO-G2
- Max Collector Current :
- 2A
- Base Part Number :
- 2SB1316
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 20 Weeks
- Transition Frequency :
- 50MHz
- Collector Emitter Saturation Voltage :
- 1.5V
- Continuous Collector Current :
- -2A
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Voltage :
- 100V
- Pin Count :
- 3
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Voltage (VCEO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 8V
- Width :
- 5.5mm
- Polarity :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 2V
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Voltage - Rated DC :
- -100V
- Max Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 10W
- Height :
- 2.3mm
- Gain Bandwidth Product :
- 50MHz
- Published :
- 2004
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- Transistor Type :
- PNP - Darlington
- Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Length :
- 6.5mm
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- HTS Code :
- 8541.29.00.75
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e2
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Current :
- 2A
- Datasheets
- 2SB1316TL
PNP - Darlington 150°C TJ 10μA ICBO 2 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1316TL Overview
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 1mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
2SB1316TL Features
the DC current gain for this device is 1000 @ 1A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is -2A
a transition frequency of 50MHz
2SB1316TL Applications
There are a lot of ROHM Semiconductor
2SB1316TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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