2SB1316TL
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- Mfr.Part #
- 2SB1316TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A CPT3
- Stock
- 30,000
- In Stock ：
- 30,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 2
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Peak Reflow Temperature (Cel) :
- 260
- Current :
- 2A
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 50MHz
- hFE Min :
- 1000
- Radiation Hardening :
- No
- Polarity :
- PNP
- Max Collector Current :
- 2A
- Max Power Dissipation :
- 10W
- Transistor Element Material :
- SILICON
- Published :
- 2004
- Factory Lead Time :
- 20 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Continuous Collector Current :
- -2A
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 100V
- Base Part Number :
- 2SB1316
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- 8V
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 100V
- Power Dissipation :
- 1W
- Termination :
- SMD/SMT
- Collector Emitter Saturation Voltage :
- 1.5V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP - Darlington
- REACH SVHC :
- No SVHC
- Width :
- 5.5mm
- Contact Plating :
- Copper, Tin
- Number of Pins :
- 3
- Number of Terminations :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 2V
- Transition Frequency :
- 50MHz
- HTS Code :
- 8541.29.00.75
- Voltage :
- 100V
- Voltage - Rated DC :
- -100V
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Current Rating :
- -2A
- Height :
- 2.3mm
- JESD-609 Code :
- e2
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Length :
- 6.5mm
- Datasheets
- 2SB1316TL
2SB1316TL Documents
PNP - Darlington 150°C TJ 10μA ICBO 2 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1316TL Overview
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 1mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
2SB1316TL Features
the DC current gain for this device is 1000 @ 1A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is -2A
a transition frequency of 50MHz
2SB1316TL Applications
There are a lot of ROHM Semiconductor
2SB1316TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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