2SA1419T-TD-H
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- Mfr.Part #
- 2SA1419T-TD-H
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A PCP
- Stock
- 312
- In Stock ：
- 312
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Transition Frequency :
- 120MHz
- Reach Compliance Code :
- not_compliant
- Max Power Dissipation :
- 500mW
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Published :
- 2012
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Base Part Number :
- 2SA1419
- Pin Count :
- 3
- Terminal Position :
- Single
- Configuration :
- Single
- Max Collector Current :
- 1.5A
- Collector Emitter Voltage (VCEO) :
- 160V
- Package / Case :
- TO-243AA
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 180V
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Number of Pins :
- 3
- hFE Min :
- 100
- Collector Emitter Breakdown Voltage :
- 160V
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e6
- Power - Max :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 5V
- Frequency - Transition :
- 120MHz
- Case Connection :
- COLLECTOR
- HTS Code :
- 8541.21.00.75
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 2 Weeks
- Terminal Form :
- Flat
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2SA1419T-TD-H
2SA1419T-TD-H Documents
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1419T-TD-H Overview
This device has a DC current gain of 200 @ 100mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 120MHz.A maximum collector current of 1.5A volts is possible.
2SA1419T-TD-H Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SA1419T-TD-H Applications
There are a lot of ON Semiconductor
2SA1419T-TD-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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