2SA1416S-TD-E

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Mfr.Part #
2SA1416S-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 100V 1A PCP
Stock
434
In Stock :
434

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Length :
4.5mm
Transistor Application :
SWITCHING
Reach Compliance Code :
not_compliant
Current - Collector Cutoff (Max) :
100nA ICBO
Factory Lead Time :
4 Weeks
Width :
2.5mm
Polarity/Channel Type :
PNP
Max Collector Current :
1A
Collector Base Voltage (VCBO) :
-120V
Operating Temperature :
150°C TJ
Pbfree Code :
yes
Pin Count :
3
Transistor Element Material :
SILICON
Transistor Type :
PNP
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-243AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gain Bandwidth Product :
120MHz
Packaging :
Tape and Reel (TR)
Collector Emitter Voltage (VCEO) :
100V
Lead Free :
Lead Free
Element Configuration :
Single
Number of Elements :
1
ECCN Code :
EAR99
JESD-609 Code :
e6
Case Connection :
COLLECTOR
Max Power Dissipation :
500mW
Number of Pins :
3
Published :
2012
Mounting Type :
Surface Mount
hFE Min :
140
Transition Frequency :
120MHz
Collector Emitter Breakdown Voltage :
100V
Max Breakdown Voltage :
100V
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Surface Mount :
yes
Emitter Base Voltage (VEBO) :
-6V
Height :
1.5mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 5V
Number of Terminations :
3
Max Frequency :
1MHz
Vce Saturation (Max) @ Ib, Ic :
400mV @ 40mA, 400mA
Terminal Form :
Flat
Collector Emitter Saturation Voltage :
-200mV
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SA1416S-TD-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-243AA, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:3, 2SA1416S-TD-E pinout, 2SA1416S-TD-E datasheet PDF, 2SA1416S-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA1416S-TD-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SA1416S-TD-E


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

2SA1416S-TD-E Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 5V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 40mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 1A volts can be achieved.

2SA1416S-TD-E Features


the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz


2SA1416S-TD-E Applications


There are a lot of ON Semiconductor
2SA1416S-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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