2SA1416S-TD-E
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- Mfr.Part #
- 2SA1416S-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A PCP
- Stock
- 434
- In Stock ：
- 434
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Flat
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -200mV
- Published :
- 2012
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 400mA
- Packaging :
- Tape and Reel (TR)
- Length :
- 4.5mm
- Emitter Base Voltage (VEBO) :
- -6V
- Max Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- hFE Min :
- 140
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Element Configuration :
- Single
- Max Power Dissipation :
- 500mW
- Reach Compliance Code :
- not_compliant
- Transition Frequency :
- 120MHz
- Number of Terminations :
- 3
- Max Collector Current :
- 1A
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 120MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 100V
- Width :
- 2.5mm
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Max Frequency :
- 1MHz
- Package / Case :
- TO-243AA
- Factory Lead Time :
- 4 Weeks
- Height :
- 1.5mm
- Collector Base Voltage (VCBO) :
- -120V
- Collector Emitter Voltage (VCEO) :
- 100V
- JESD-609 Code :
- e6
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Number of Elements :
- 1
- Datasheets
- 2SA1416S-TD-E
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1416S-TD-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 5V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 40mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
2SA1416S-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz
2SA1416S-TD-E Applications
There are a lot of ON Semiconductor
2SA1416S-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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