2SA1381DSTU
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- Mfr.Part #
- 2SA1381DSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.1A TO126-3
- Stock
- 24,892
- In Stock ：
- 24,892
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- Transistor Type :
- PNP
- Base Part Number :
- 2SA1381
- Package / Case :
- TO-225AA, TO-126-3
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 100mA
- Transistor Application :
- AMPLIFIER
- JESD-30 Code :
- R-PSFM-T3
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Through Hole
- Transition Frequency :
- 150MHz
- Power - Max :
- 7W
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 10V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 2mA, 20mA
- Frequency - Transition :
- 150MHz
- Datasheets
- 2SA1381DSTU
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
2SA1381DSTU Overview
This device has a DC current gain of 60 @ 10mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 150MHz.Detection of Collector Emitter Breakdown at 300V maximal voltage is present.
2SA1381DSTU Features
the DC current gain for this device is 60 @ 10mA 10V
the vce saturation(Max) is 600mV @ 2mA, 20mA
a transition frequency of 150MHz
2SA1381DSTU Applications
There are a lot of ON Semiconductor
2SA1381DSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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