2SA1162YT1

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Mfr.Part #
2SA1162YT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 50V 0.15A SC59
Stock
33,185
In Stock :
33,185

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Position :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
80MHz
JESD-30 Code :
R-PDSO-G3
RoHS Status :
Non-RoHS Compliant
Number of Terminations :
3
Terminal Finish :
TIN LEAD
JESD-609 Code :
e0
Transition Frequency :
80MHz
Packaging :
Tape and Reel (TR)
Polarity/Channel Type :
PNP
Voltage - Collector Emitter Breakdown (Max) :
50V
Power - Max :
200mW
Surface Mount :
yes
Transistor Application :
AMPLIFIER
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) :
100nA
Mounting Type :
Surface Mount
Reach Compliance Code :
Unknown
Configuration :
Single
Qualification Status :
COMMERCIAL
Terminal Form :
Gull wing
Operating Temperature :
-55°C~150°C TJ
Current - Collector (Ic) (Max) :
150mA
Pbfree Code :
No
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
30
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 2mA 6V
Transistor Type :
PNP
Package / Case :
TO-236-3, SC-59, SOT-23-3
Peak Reflow Temperature (Cel) :
240
Transistor Element Material :
SILICON
Datasheets
2SA1162YT1
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SA1162YT1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, 2SA1162YT1 pinout, 2SA1162YT1 datasheet PDF, 2SA1162YT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA1162YT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SA1162YT1


PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

2SA1162YT1 Overview


In this device, the DC current gain is 120 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.80MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 50V.

2SA1162YT1 Features


the DC current gain for this device is 120 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 80MHz


2SA1162YT1 Applications


There are a lot of Rochester Electronics, LLC
2SA1162YT1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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