2SA1162YT1

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Mfr.Part #
2SA1162YT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 50V 0.15A SC59
Stock
33,185
In Stock :
33,185

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 2mA 6V
Pin Count :
3
Terminal Form :
Gull wing
Configuration :
Single
Reach Compliance Code :
Unknown
Current - Collector Cutoff (Max) :
100nA
Transistor Application :
AMPLIFIER
Qualification Status :
COMMERCIAL
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Frequency - Transition :
80MHz
Transistor Type :
PNP
Voltage - Collector Emitter Breakdown (Max) :
50V
Transistor Element Material :
SILICON
Terminal Finish :
TIN LEAD
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
30
Surface Mount :
yes
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
R-PDSO-G3
Transition Frequency :
80MHz
Terminal Position :
Dual
Power - Max :
200mW
Packaging :
Tape and Reel (TR)
RoHS Status :
Non-RoHS Compliant
Pbfree Code :
No
Polarity/Channel Type :
PNP
Peak Reflow Temperature (Cel) :
240
Mounting Type :
Surface Mount
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-236-3, SC-59, SOT-23-3
JESD-609 Code :
e0
Datasheets
2SA1162YT1
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SA1162YT1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, 2SA1162YT1 pinout, 2SA1162YT1 datasheet PDF, 2SA1162YT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA1162YT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SA1162YT1


PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

2SA1162YT1 Overview


In this device, the DC current gain is 120 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.80MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 50V.

2SA1162YT1 Features


the DC current gain for this device is 120 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 80MHz


2SA1162YT1 Applications


There are a lot of Rochester Electronics, LLC
2SA1162YT1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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