2N6798U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Number of Terminations :

15

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Vgs (Max) :

±20V

Mount :

Surface Mount

Number of Elements :

1

DS Breakdown Voltage-Min :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-CQCC-N15

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

800mW Ta 25W Tc

Gate Charge (Qg) (Max) @ Vgs :

5.29nC @ 10V

Drain-source On Resistance-Max :

0.42Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

18

Operating Temperature :

-55°C~150°C TJ

Case Connection :

SOURCE

Drain to Source Voltage (Vdss) :

200V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Package / Case :

18-CLCC

Continuous Drain Current (ID) :

5.5A

Packaging :

Bulk

Published :

1997

Transistor Element Material :

SILICON

Terminal Form :

NO LEAD

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

400m Ω @ 3.5A, 10V

Terminal Position :

QUAD