2N6798

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.42Ohm

Transistor Application :

SWITCHING

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Terminal Form :

Wire

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

200V

HTS Code :

8541.21.00.95

Drain to Source Voltage (Vdss) :

200V

FET Type :

N-Channel

Published :

1997

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Terminal Finish :

TIN LEAD OVER NICKEL

Power Dissipation-Max :

800mW Ta 25W Tc

Case Connection :

DRAIN

Vgs (Max) :

±20V

Packaging :

Bulk

ECCN Code :

EAR99

Continuous Drain Current (ID) :

5.5A

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

400m Ω @ 3.5A, 10V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

5.29nC @ 10V

Number of Elements :

1

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Package / Case :

TO-205AF Metal Can

JESD-30 Code :

O-MBCY-W3

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA