2N6798

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

DS Breakdown Voltage-Min :

200V

Gate Charge (Qg) (Max) @ Vgs :

5.29nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.42Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Number of Terminations :

3

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Terminal Form :

Wire

Continuous Drain Current (ID) :

5.5A

Package / Case :

TO-205AF Metal Can

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

800mW Ta 25W Tc

Number of Elements :

1

JESD-30 Code :

O-MBCY-W3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

400m Ω @ 3.5A, 10V

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

200V

Terminal Finish :

TIN LEAD OVER NICKEL

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

BOTTOM

HTS Code :

8541.21.00.95

Case Connection :

DRAIN

Published :

1997

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

ECCN Code :

EAR99