2N6796U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

800mW Ta 25W Tc

Operating Mode :

ENHANCEMENT MODE

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Vgs(th) (Max) @ Id :

4V @ 250mA

FET Type :

N-Channel

Mount :

Surface Mount

Pin Count :

16

Mounting Type :

Surface Mount

JESD-30 Code :

R-CQCC-N15

DS Breakdown Voltage-Min :

100V

ECCN Code :

EAR99

Packaging :

Bulk

Drain Current-Max (Abs) (ID) :

8A

Rds On (Max) @ Id, Vgs :

180m Ω @ 5A, 10V

Continuous Drain Current (ID) :

8A

Transistor Element Material :

SILICON

Terminal Form :

NO LEAD

Gate Charge (Qg) (Max) @ Vgs :

6.34nC @ 10V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.195Ohm

Number of Elements :

1

Number of Terminations :

15

Package / Case :

18-CLCC

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

QUAD

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±20V