2N6792TX

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Package :

Bulk

RoHS :

Non-Compliant

Supplier Device Package :

TO-205AF (TO-39)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Wire

Reach Compliance Code :

Unknown

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 25 V

Vgs (Max) :

±20V

JESD-30 Code :

O-MBCY-W3

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

400 V

Drain-source On Resistance-Max :

1.8 Ω

Number of Elements :

1

Drive Voltage (Max Rds On, Min Rds On) :

10V

Transistor Element Material :

SILICON

Surface Mount :

No

Vgs(th) (Max) @ Id :

4V @ 1mA

Series :

-

Package / Case :

TO-205AF Metal Can

Operating Temperature :

-55°C ~ 150°C (TJ)

Pulsed Drain Current-Max (IDM) :

10 A

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

3

Power Dissipation (Max) :

20W (Tc)

JEDEC-95 Code :

TO-205AF

Current - Continuous Drain (Id) @ 25°C :

2A (Tc)

Additional Feature :

RADIATION HARDENED

Product Status :

Active

Polarity/Channel Type :

N-Channel

Package Shape :

Round

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Terminal Position :

BOTTOM

Rds On (Max) @ Id, Vgs :

1.8Ohm @ 1.25A, 10V

Reference Standard :

MILITARY STANDARD (USA)

DS Breakdown Voltage-Min :

400 V

Manufacturer :

Rochester Electronics LLC